FDB024N04AL7

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FDB024N04AL7 datasheet

• Маркировка
  FDB024N04AL7
• Производитель
  Fairchild Semiconductor
• Описание
  Fairchild Semiconductor FDB024N04AL7 Configuration: Single Continuous Drain Current: 219 A Current - Continuous Drain (id) @ 25?° C: 100A Drain To Source Voltage (vdss): 40V Drain-source Breakdown Voltage: 40 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 368 S Gate Charge (qg) @ Vgs: 109nC @ 10V Gate Charge Qg: 84 nC Gate-source Breakdown Voltage: 20 V Input Capacitance (ciss) @ Vds: 7300pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Surface Mount Package / Case: TO-263-8, D??Pak (7 leads + Tab), TO-263CA Power - Max: 214W Power Dissipation: 214 W Rds On (max) @ Id, Vgs: 2.4 mOhm @ 80A, 10V Resistance Drain-source Rds (on): 2 mOhms Series: PowerTrench?® Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 3V @ 250?µA
• Количество страниц
  9 шт.
• Форматы файла
  HTML, PDF

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